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HY5RS123235FP Datasheet 512m (16mx32) Gddr3 Sdram

Manufacturer: SK Hynix

Overview: HY5RS123235FP 512M (16Mx32) GDDR3 SDRAM HY5RS123235FP This document is a general.

General Description

and is subject to change without notice.

Hynix Semiconductor does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Key Features

  • 2.2V +/-0.1V VDD/VDDQ power supply supports 900MHz 2.0V VDD/ VDDQ wide range min/max power supply supports 700/ 800MHz.
  • 1.8V VDD/ VDDQ wide range min/max power supply supports 500 / 600MHz.
  • Single ended READ Strobe (RDQS) per byte Single ended WRITE Strobe (WDQS) per byte Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle.
  • Calibrated output driver Differential.

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