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HY5RS123235FP - 512M (16Mx32) GDDR3 SDRAM

General Description

and is subject to change without notice.

Hynix Semiconductor does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Key Features

  • 2.2V +/-0.1V VDD/VDDQ power supply supports 900MHz 2.0V VDD/ VDDQ wide range min/max power supply supports 700/ 800MHz.
  • 1.8V VDD/ VDDQ wide range min/max power supply supports 500 / 600MHz.
  • Single ended READ Strobe (RDQS) per byte Single ended WRITE Strobe (WDQS) per byte Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle.
  • Calibrated output driver Differential.

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HY5RS123235FP-11 512M (16Mx32) GDDR3 SDRAM
HY5RS123235FP-12 512M (16Mx32) GDDR3 SDRAM
HY5RS123235FP-14 512M (16Mx32) GDDR3 SDRAM
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HY5RS123235FP-2 512M (16Mx32) GDDR3 SDRAM

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HY5RS123235FP 512M (16Mx32) GDDR3 SDRAM HY5RS123235FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.3 / Feb. 2006 1 HY5RS123235FP Revision History Revision No. 0.1 0.2 History Defined target spec.