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HY5S6B6x Datasheet

Manufacturer: SK Hynix

This datasheet includes multiple variants, all published together in a single manufacturer document.

HY5S6B6x datasheet preview

Datasheet Details

Part number HY5S6B6x
Datasheet HY5S6B6x HY5S6B6D Datasheet (PDF)
File Size 386.10 KB
Manufacturer SK Hynix
Description (HY5S6B6D/L/S/F/P) 4Banks x 1M x 16-Bits SDRAM
HY5S6B6x page 2 HY5S6B6x page 3

HY5S6B6x Overview

and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY5S6B6x Key Features

  • Power Supply Voltage : VDD = 1.8V, VDDQ = 1.8V LVCMOS patible I/O Interface Low Voltage interface to reduce I/O power Lo
  • PASR(Partial Array Self Refresh)
  • AUTO TCSR (Temperature pensated Self Refresh)
  • DS (Drive Strength)
  • Deep Power Down Mode Programmable CAS latency of 1, 2 or 3 Package Type : 54ball, 0.8mm pitch FBGA (Lead Free, Lead)
  • ORDERING INFORMATION
SK Hynix logo - Manufacturer

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Part Number Description
HY5S6B6 (HY5S6B6D/L/S/F/P) 4Banks x 1M x 16-Bits SDRAM
HY5S6B6D (HY5S6B6D/L/S/F/P) 4Banks x 1M x 16-Bits SDRAM
HY5S2B6DLF-BE 4Banks x 2M x 16bits Synchronous DRAM
HY5S2B6DLF-SE 4Banks x 2M x 16bits Synchronous DRAM
HY5S2B6DLFP-BE 4Banks x 2M x 16bits Synchronous DRAM
HY5S2B6DLFP-SE 4Banks x 2M x 16bits Synchronous DRAM
HY5S5B2BLF-6E 256M (8Mx32bit) Mobile SDRAM
HY5S5B2BLF-HE 256M (8Mx32bit) Mobile SDRAM
HY5S5B2BLF-SE 256M (8Mx32bit) Mobile SDRAM
HY5S5B2BLFP-6E 256M (8Mx32bit) Mobile SDRAM

HY5S6B6x Distributor

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