HY5S6B6x - (HY5S6B6D/L/S/F/P) 4Banks x 1M x 16-Bits SDRAM

This page provides the datasheet information for the HY5S6B6x, a member of the HY5S6B6D (HY5S6B6D/L/S/F/P) 4Banks x 1M x 16-Bits SDRAM family.

Product Overview

Hynix Semiconductor

Part number	HY5S6B6x
Manufacturer	Hynix Semiconductor
File Size	386.10 KB
Description	(HY5S6B6D/L/S/F/P) 4Banks x 1M x 16-Bits SDRAM
Datasheet	HY5S6B6x Datasheet
Additional preview pages of the HY5S6B6x datasheet.

and is subject to change without notice.

Hynix does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Standard SDRAM Protocol Internal 4bank operation.
Power Supply Voltage : VDD = 1.8V, VDDQ = 1.8V LVCMOS compatible I/O Interface Low Voltage interface to reduce I/O power Low Power Features - PASR(Partial Array Self Refresh) - AUTO TCSR (Temperature Compensated Self Refresh) - DS (Drive Strength) - Deep Power Down Mode Programmable CAS latency of 1, 2 or 3 Package Type : 54ball, 0.8mm pitch FBGA (Lead Free, Lead) HY5S6B6D(L/S)FP : Lead Free HY5S6B6D(L/S)F : Lead.

Other Datasheets by Hynix Semiconductor

Published: Jan 13, 2006 |