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HY62256B - 32K x 8-Bit CMOS SRAM

Description

The HY62256B is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hyundai's high performance CMOS process technology.

It is suitable for use in low voltage operation and battery back-up application.

Features

  • Fully static operation and Tri-state output TTL compatible inputs and outputs Low power consumption Battery backup(L/LL-part) - 2.0V(min. ) data retention.
  • Standard pin configuration - 28 pin 600 mil PDIP - 28 pin 330mil SOP - 28 pin 8x13.4 mm TSOP-I (Standard and Reversed) Standby Current(uA) L LL 1mA 100 25 Temperature (°C) 0~70(Normal) Product Voltage Speed No. (V) (ns) HY62256B 5.0 55/70/85 Note 1. Current value is max. Operation Current(mA).

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Datasheet Details

Part number HY62256B
Manufacturer SK Hynix
File Size 307.69 KB
Description 32K x 8-Bit CMOS SRAM
Datasheet download datasheet HY62256B Datasheet
Additional preview pages of the HY62256B datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com HY62256B Series 32Kx8bit CMOS SRAM DESCRIPTION The HY62256B is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hyundai's high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0 volt. FEATURES • • • • Fully static operation and Tri-state output TTL compatible inputs and outputs Low power consumption Battery backup(L/LL-part) - 2.0V(min.) data retention • Standard pin configuration - 28 pin 600 mil PDIP - 28 pin 330mil SOP - 28 pin 8x13.
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