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HY62KF08802B-DDI - 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM

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Hynix Semiconductor

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HY62KF08802B-DDI 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM by Hynix Semiconductor - Datasheet Preview — Datasheet preview – HY62KF08802B-DDI

Datasheet Details

Part number	HY62KF08802B-DDI
Manufacturer	Hynix Semiconductor
File Size	142.39 KB
Description	1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM
Datasheet	HY62KF08802B-DDI Datasheet
Additional preview pages of the HY62KF08802B-DDI datasheet.

Product details

Description

and is subject to change without notice.

Features

Fully static operation and Tri-state output.
TTL compatible inputs and outputs.
Battery backup -. 1.2V(min) data retention.
Standard pin configuration -. 44pin 400mil TSOP-II (Forward) Product No. HY62KF08802B-I Voltage (V) 2.7~3.6 Speed (ns) 55/70 Operation Current/Icc(mA) 2 Standby Current(uA) SL LL 12 30 Temperature (°C) -40~85 Note 1. I : Industrial 2. Current value is max. PIN.

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Published: Apr 2, 2005 |