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HY62KF08802B-SDI - 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM

General Description

and is subject to change without notice.

Hynix Electronics does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Key Features

  • Fully static operation and Tri-state output.
  • TTL compatible inputs and outputs.
  • Battery backup -. 1.2V(min) data retention.
  • Standard pin configuration -. 44pin 400mil TSOP-II (Forward) Product No. HY62KF08802B-I Voltage (V) 2.7~3.6 Speed (ns) 55/70 Operation Current/Icc(mA) 2 Standby Current(uA) SL LL 12 30 Temperature (°C) -40~85 Note 1. I : Industrial 2. Current value is max. PIN.

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Datasheet Details

Part number HY62KF08802B-SDI
Manufacturer SK Hynix
File Size 142.39 KB
Description 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM
Datasheet download datasheet HY62KF08802B-SDI Datasheet

Full PDF Text Transcription for HY62KF08802B-SDI (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HY62KF08802B-SDI. For precise diagrams, and layout, please refer to the original PDF.

HY62KF08802B Series 1Mx8bit full CMOS SRAM Document Title 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 I...

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Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Jan.19.2002 Preliminary This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.00 / Jan.02 Hynix Semiconductor HY62KF08802B Series DESCRIPTION The HY62KF08802B is a high speed, super low power and 8Mbit full CMOS SRAM organized as 1M words by 8bits. The HY62KF08802B uses high performance full CMOS process technology and is designed for high speed and low power circuit technology.

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