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HY62KF08802B - 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM

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Hynix Semiconductor

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HY62KF08802B 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM by Hynix Semiconductor - Datasheet Preview — Datasheet preview – HY62KF08802B

Datasheet Details

Part number	HY62KF08802B
Manufacturer	Hynix Semiconductor
File Size	142.39 KB
Description	1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM
Datasheet	HY62KF08802B Datasheet
Additional preview pages of the HY62KF08802B datasheet.

Product details

Description

and is subject to change without notice.

Features

Fully static operation and Tri-state output.
TTL compatible inputs and outputs.
Battery backup -. 1.2V(min) data retention.
Standard pin configuration -. 44pin 400mil TSOP-II (Forward) Product No. HY62KF08802B-I Voltage (V) 2.7~3.6 Speed (ns) 55/70 Operation Current/Icc(mA) 2 Standby Current(uA) SL LL 12 30 Temperature (°C) -40~85 Note 1. I : Industrial 2. Current value is max. PIN.

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Other Datasheets by Hynix Semiconductor

HY62KF08802B-DD - 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM
HY62KF08802B-DDI - 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM
HY62KF08802B-SD - 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM
HY62KF08802B-SDI - 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM
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Published: Apr 2, 2005 |