HY62UF16806A Datasheet PDF (512Kx16bit full CMOS SRAM) | Download Hynix Semiconductor HY62UF16806A

HY62UF16806A - 512Kx16bit full CMOS SRAM

Description

and is subject to change without notice.

Hynix Semiconductor Inc does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

Fully static operation and Tri-state output.
TTL compatible inputs and outputs.
Battery backup(LL/SL-part) - 1.2V(min) data retention.
Standard pin configuration - 48-uBGA Operation Current/Icc(mA) 4 4 Standby Current(uA) LL SL 25 8 25 8 Temperature (°C) 0~70 -40~85 PIN.

Datasheet Details

Part number	HY62UF16806A
Manufacturer	SK Hynix
File Size	191.67 KB
Description	512Kx16bit full CMOS SRAM
Datasheet	HY62UF16806A Datasheet
Additional preview pages of the HY62UF16806A datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com HY62UF16806A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 3.0V Super Low Power Full CMOS slow SRAM Revision History Revision No 00 01 History Initial Draft Change Logo - Hyundai à Hynix Change DC Parameter - Isb1(LL) : 40uA à - Isb1(Typ) : 8uA à - Icc : 5mA à - Icc1(1us) : 8mA à - Icc1(Min) : 50mA à Change Data Retention - IccDR(LL) : 25uA à Change AC Parameter - tOE : 35ns à : 40ns à - tCW : 50ns à - tAW : 50ns à - tBW : 50ns à - tWP : 45ns à - tCHZ : 30ns à - tOHZ : 30ns à - tBHZ : 30ns à 25uA 1uA 4mA 4mA 40mA 15uA 25ns@55ns 35ns@70ns 45ns@55ns 45ns@55ns 45ns@55ns 45ns@55ns 20ns@55ns , 30ns à 25ns@70ns 20ns@55ns , 30ns à 25ns@70ns 20ns@55ns , 30ns à 25ns@70ns Mar.15.2002 Draft Date Feb.21.2001 Apr.28.2001 Remark Preliminary 02 Jan.28.

Published: Dec 12, 2006 |