HY62UF16806B Datasheet | SK Hynix

description and is subject to change without notice. Hynix Semiconductor Inc does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.01 / Mar. 2002 Hynix Semiconductor Preliminary DESCRIPTION The HY62UF16806B is a high speed, super low power and 8Mbit full CMOS SRAM organized as 524,288 words by 16bits. The HY62UF16806B uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly wellsuited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V. Product Voltage Speed No. (V) (ns) HY62UF16806B-C 2.7~3.3 55/70/85 HY62UF16806B-I 2.7~3.3 55/70/85 Note 1. C : mercial, I : Industrial 2. Current value is max. FEATURES - Fully static operation and Tri-state output - TTL patible inputs and outputs - Battery backup(LL/SL-part) - 1.2V(min) data retention - Standard pin configuration - 48-FBGA Operation Current/Icc(m A) 3 3 Standby Current(u A) LL 15 15 Temperature (°C) 0~70 -40~85 PIN CONNECTION ( Top View ) BLOCK DIAGRAM 2 /OE /UB 3 A0 A3 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 /CS1 IO2 IO4 IO5 IO6 6 CS2 COLUMN DECODER ROW DECODER SENSE AMP A B C D E F G H /LB IO9 I/O1 IO1 ADD INPUT BUFFER PRE DECODER I/O8 DATA I/O BUFFER IO10 IO11 A5 Vss Vcc IO12 A17 IO13 Vss IO3 Vcc Vss IO7 A18 MEMORY ARRAY 512K x 16 WRITE DRIVER I/O9 BLOCK DECODER IO15 IO14 A14 IO16 NC A18 A8 A12 A9 I/O16 /WE IO8 A11 NC /CS1 CS2 /OE /LB /UB...