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HY62UF16806B - 512Kx16bit full CMOS SRAM

General Description

and is subject to change without notice.

Hynix Semiconductor Inc does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Key Features

  • Fully static operation and Tri-state output.
  • TTL compatible inputs and outputs.
  • Battery backup(LL/SL-part) - 1.2V(min) data retention.
  • Standard pin configuration - 48-FBGA Operation Current/Icc(mA) 3 3 Standby Current(uA) LL 15 15 Temperature (°C) 0~70 -40~85 PIN.

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Full PDF Text Transcription for HY62UF16806B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HY62UF16806B. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com HY62UF16806B Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 3.0V Super Low Power Full CMOS slow SRAM Revision History Revision No 00 01 ...

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uper Low Power Full CMOS slow SRAM Revision History Revision No 00 01 History Initial Release DC Para Change Icc 4mA à Icc1(Min) 40mA à Icc1(1us) 8mA à Isb 0.1mA à Isb1 25uA à Iccdr 12uA à Draft Date May.29.2001 Mar.20.2002 3mA 20mA 2mA 0.3mA 15uA 6uA Remark Preliminary This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.01 / Mar. 2002 Hynix Semiconductor HY62UF16806B Preliminary DESCRIPTION The HY62UF16806B is a high speed, super low power and 8Mbit full CMOS SRA

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