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HY62UT08081E - 32Kx8bit CMOS SRAM

Download the HY62UT08081E datasheet PDF. This datasheet also covers the HY62KT08081E variant, as both devices belong to the same 32kx8bit cmos sram family and are provided as variant models within a single manufacturer datasheet.

General Description

and is subject to change without notice.

Hynix Electronics does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Key Features

  • Fully static operation and Tri-state output TTL compatible inputs and outputs Low power consumption Battery backup(L/LL-part) - 2.0V(min. ) data retention.
  • Standard pin configuration - 28 pin 600mil PDIP - 28 pin 330mil SOP - 28 pin 8x13.4 mm TSOP-I (Standard) Standby Current(uA) LL-Part 5 8 8 5 8 8 5 8 8 Temperature (°C) 0~70(Normal) -25~85(Extended) -40~85(Extended) 0~70(Normal) -25~85(Extended) -40~85(Extended) 0~70(Normal) -25~85(Extended) -40~.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY62KT08081E_HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for HY62UT08081E (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HY62UT08081E. For precise diagrams, and layout, please refer to the original PDF.

HY62K(U,V)T08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 2.7~3.3V / 3.0~3.6V / 2.7~3.6V Low Power Slow SRAM Revision History Revision No 00 www.DataSheet4U.c...

View more extracted text
Low Power Slow SRAM Revision History Revision No 00 www.DataSheet4U.com History Initial Merged 3.0V/3.3V SPEC Revised - Marking Information Change : SOP Type - Voh Limit Change : 2.4V => 2.2V @2.7~3.6V Changed Logo - HYUNDAI -> hynix - Marking Information Change Draft Date Jan.20.2000 Remark Final 01 Feb.21.2001 Final 02 Apr.30.2001 Final This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 02 / Apr.

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