HY64UD16162B Datasheet PDF (1M x 16 bit Low Low Power 1T/1C Pseudo SRAM) | Download Hynix Semiconductor HY64UD16162B

HY64UD16162B - 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM

Description

and is subject to change without notice.

Hynix Semiconductor Inc.

does not assume any responsibility for use of circuits described.

Features

CMOS Process Technology.
1M x 16 bit Organization.
TTL compatible and Tri-state outputs.
Deep Power Down : Memory cell data hold invalid.
Standard pin configuration : 48-FBGA(6mmX8mm).
Data mask function by /LB, /UB.
Separated I/O Power Supply : Vddq.

Datasheet Details

Part number	HY64UD16162B
Manufacturer	SK Hynix
File Size	311.88 KB
Description	1M x 16 bit Low Low Power 1T/1C Pseudo SRAM
Datasheet	HY64UD16162B Datasheet
Additional preview pages of the HY64UD16162B datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com HY64UD16162B Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History 1.0 Initial Draft Date Dec. 3. ’02 Remark Preliminary This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for use of circuits described. No patent licenses are implied. Revision 1.0 / December. 2002 1 HY64UD16162B Series 1M x 16 bit Low Low Power 1T/1C SRAM DESCRIPTION The HY64UD16162B is a 16Mbit 1T/1C SRAM featured by high-speed operation and super low power consumption. The HY64UD16162B adopts one transistor memory cell and is organized as 1,048,576 words by 16bits.

Published: Dec 13, 2006 |