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HY64UD16162M - 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM

Product Overview

Hynix Semiconductor

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HY64UD16162M 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM by Hynix Semiconductor - Datasheet Preview — Datasheet preview – HY64UD16162M

Datasheet Details

Part number	HY64UD16162M
Manufacturer	Hynix Semiconductor
File Size	283.59 KB
Description	1M x 16 bit Low Low Power 1T/1C Pseudo SRAM
Datasheet	HY64UD16162M Datasheet
Additional preview pages of the HY64UD16162M datasheet.

Product details

Description

- Power Up & Deep Power Down Exit Sequence Mar.

Features

CMOS Process Technology.
1M x 16 bit Organization.
TTL compatible and Tri-state outputs.
Deep Power Down : Memory cell data hold invalid.
Standard pin configuration : 48-FBGA.
Data mask function by /LB, /UB.

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Other Datasheets by Hynix Semiconductor

HY64UD16162B - 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM
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Published: Dec 13, 2006 |