HY638256 Overview
The HY638256 is a high-speed 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with high-speed circuit design techniques, yields maximum access time of 15ns. The HY638256 has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 2.0 volt.
HY638256 Key Features
- Single 5V±10% Power Supply
- High speed
- 15/20/25ns(max.)
- Low power consumption(Max.) Mode Conditions Current Units Operating 15ns 100 mA 20/25ns 90 mA Standby TTL 30 mA CMOS 2 m
- Battery backup(L-part)
- 2.0V(min) data retention
- Fully static operation and Tri-state outputs
- No clock or refresh required
- TTL patible inputs and outputs
- Standard