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IC62LV5128LL - 512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM

This page provides the datasheet information for the IC62LV5128LL, a member of the IC62LV5128L 512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM family.

Datasheet Summary

Description

The ICSI IC62LV5128L and IC62LV5128LL is a low voltage, ICSI's low voltage, six transistor (6T), CMOS technology.

device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers.

Features

  • Access times of 55, 70, 100 ns.
  • CMOS Low power operation:.
  • 60 mW (typical) operation.
  • 3 µW (typical) standby.
  • Low data retention voltage: 1.5V (min. ).
  • Output Enable (OE) and Chip Enable (CE) inputs for ease in.

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Datasheet preview – IC62LV5128LL

Datasheet Details

Part number IC62LV5128LL
Manufacturer ICSI
File Size 198.07 KB
Description 512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM
Datasheet download datasheet IC62LV5128LL Datasheet
Additional preview pages of the IC62LV5128LL datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com IC62LV5128L IC62LV5128LL Document Title 512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM Revision History Revision No 0A 0B History Initial Draft Draft Date May 1,2001 Remark Preliminary 1. Change for tPWE: 45 to 40 ns for 55 ns product August 31,2001 : 60 to 40 ns for 70 ns product 2. Change for VCC: 2.2-3.6V to 2.7-3.6V 3.1 Change for ICC test conditiomn: VCC=Max. to 3V 3.2 Change for ICC: 30 to 25mA for 55 ns product 25 to 20mA for 70 ns porduct 20 to 15 mA for 100 ns product 4.1 Change for VDR Min. : 1.2 to 1.5V 4.2 Change for IDR test condition: VCC=1.2 to 1.5V and IDR 5. Change for tHZCE 25 to 20 ns for 55 ns product 6. Change for tHZWE 33 to 30 ns for 70 ns product The attached datasheets are provided by ICSI.
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