Inchange Semiconductor 10N60
N-Channel Mosfet Transistor
- Channels : 1
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
FEATURES
●Drain Current –ID= 9.5A@ TC=25℃●Drain Source Voltage- : VDSS= 600V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 0.73Ω(Max)
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●DESCRITION
●Designed for high efficiency switch mode power supply.
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ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 9.5 A IDM Drain Current-Single Plused 38 A PD Total Dissipation @TC=25℃ 156 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.8 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W 10N60 isc website: 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=...