Unisonic Technologies 10N60
10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
| Part No. |
10N60 |
| Datasheet |
10N60
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| Manufacturer |
 Unisonic Technologies |
| Description |
N-CHANNEL POWER MOSFET |
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DESCRIPTION
The UTC FEATURES
*Pb-free plating product number: 10N60L * 10A, 600V, RDS(ON) =0.73Ω@VGS =10V * Low gate charge ( typical 44 nC) * Low Crss ( typical 18 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Normal Lead Free Plating 10N60-x-TA3-T 10N60L-x-TA3-T Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube Copyright © 2007 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-119.A 10N60 Power MOSFET ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise specified) PARAMETER SYMBOL 10N60-A 10N60-B (Note 1) TC = 25°C TC = 100°C VDSS VGSS IAR ID IDM EAS EAR dv/dt PD TJ TOPR TSTG RATINGS 600 650 ± 30 9.5 9.5 3.3 38 700 15.6 4.5 156 +150 -55 ~ +150 -55 ~ +150 UNIT V V V A A A mJ mJ V/ns W Drain-Source Voltage Gate-Source Voltage Avalanche Current Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulsed (Note 2) Avalanche Energy Repetitive (Note 1) Peak Diode Recovery dv/dt (...
