Inchange Semiconductor 12N60
N-Channel MOSFET
| Part No. | 12N60 |
|---|---|
| Datasheet | 12N60 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Drain Current –ID= 12A@ TC=25℃●Drain Source Voltage- : VDSS= 600V (Min)
●Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max)
●Avalanche Energy Specified
●Fast Switching
●Simple Drive Requirements
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●DESCRITION
●Designed for high efficiency switch mode power supply.
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ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 12 A IDM Drain Current-Single Plused 48 A Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.8 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-So...