Datasheet Details
| Part number | 2N2955 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.33 KB |
| Description | PNP Transistor |
| Datasheet | 2N2955-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistors.
| Part number | 2N2955 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.33 KB |
| Description | PNP Transistor |
| Datasheet | 2N2955-INCHANGE.pdf |
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·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC= -4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.1V(Max)@ IC= -4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -15 A IB Base Current PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -7 A 115 W 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.52 ℃/W 2N2955 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2N2955 | SILICON PNP TRANSISTOR | Unisonic Technologies |
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2N2955 | PNP Transistor | Motorola |
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2N2955 | PNP EPITAXIAL PLANAR TRANSISTOR | Dc Components |
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2N2955HV | Silicon PNP Power Transistor | Inchange Semiconductor |
| Part Number | Description |
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