The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2N2955 (GERMANIUM) 2N2956 2N2957
CASE12(~ (TO.18)Z Collector connected to case
PNP germanium epitaxial mesa transistors for highspeed switching applications.
MAXI MUM RATI NGS (TA = 250C unless otherwise noted)
Rating
Collector-Base Voltage
Emitter-Base Voltage 2N2955
Collector-Emitter Voltage 2N2956 2N2957
Collector Current
Junction Temperature
Storage Temperature
Total Device Dissipation at 25°C Case Temperature (Derate 4 mW/oC above 25°C)
Total Device Dissipation at 25°C Ambient Temperature (Derate 2 mW/oC above 25°C)
Symbol
VCS VES VCEO
Ie
TJ Tstg
PD
PD
Value
40 3.5
25 20
18
100 100 -65 to +100
300
150
Unit
Vdc Vdc Vdc mAdc °c °c
mW
mW
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Collector-Base Breakdown Voltage
(Ie = 100 j.
2N2955 Datasheet
