Datasheet Details
| Part number | 2N2955HV |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 100.60 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2N2955HV-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Product.
| Part number | 2N2955HV |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 100.60 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2N2955HV-InchangeSemiconductor.pdf |
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·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC= -4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.1V(Max)@ IC= -4A ·Complement to Type 2N3055HV APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCER VCEO Collector-Emitter Voltage Collector-Emitter Voltage -100 -100 V V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous IB Base Current PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature -15 -7 115 200 -65~200 A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.52 ℃/W isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Product Specification 2N2955HV ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -200mA ;
IB= 0 -100 V VCER(SUS) Collector-Emitter Sustaining Voltage IC= -200mA ;
RBE= 100Ω VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A;
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2N2955 | PNP Transistor | INCHANGE |
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