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2N2955HV - Silicon PNP Power Transistor

General Description

Excellent Safe Operating Area DC Current Gain- : hFE=20-70@IC= -4A Collector-Emitter Saturation Voltage- : VCE(sat)= -1.1V(Max)@ IC= -4A Complement to Type 2N3055HV APPLICATIONS Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=2

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INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Product Specification 2N2955HV DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC= -4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.