Inchange Semiconductor 2N3441
Silicon NPN Power Transistors
DESCRIPTION
●With TO-66 package●Continuous collector current-IC=3A
●Power dissipation -PD=25W @TC=25℃
APPLICATIONS
For use in general-purpose switching and Linear amplifier applications such as:●Driver for high power outputs
●Series and shunt regulators
●Audio and servo amplifiers
●Solenoid and relay drivers
●Power switching circuits PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector
DESCRIPTION
Fig.1 simplified outline (TO-66) and symbolABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 160 140 7 3 2 25 200 -65~200 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case MAX 7.0 UNIT ℃/W Datasheet pdf - Inchange Semiconductor Product Specification Silicon NPN Power Transistors...