Microsemi 2N3441
NPN POWER SILICON TRANSISTOR
| Part No. | 2N3441 |
|---|---|
| Datasheet | 2N3441 Download |
| Manufacturer |  Microsemi |
| Description | NPN POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VCBO VCER VEBO IB IC PT TJ, Tstg Symbol RθJC RθJA Value 140 160 150 7.0 2.0 3.0 3.0 25 -65 to +200 Max. 7.0 58.5 Units Vdc Vdc Vdc Vdc Adc Adc W W 0 C Unit 0 0 @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Junction-to-Ambient 1) TO-66* (TO-213AA) C/W C/W 2) Derate linearly @ 17.1 mW/0C for TA > +250C Derate linearly @ 143 mW/0C for TC > +250C *See Appendix A for Package OutlineELECTRICAL CHARACTERISTICS
(TC = 250C unless otherwise noted) Characteristics Symbol V(BR)CEO V(BR)CER V(BR)CEX ICEX IEBO Min. 140 150 160 1.0 1.0 Max. Unit Vdc Vdc Vdc mAdc mAdc OFF CHARACTERISTICS Collector-Emitter Voltage IC = 100 mAdc Collector-Emitter Breakdown Voltage IC = 100 mAdc, RBE = 100 Ω Collector-Emitter...
