Inchange Semiconductor 2N3767
Silicon NPN Power Transistors
| Part No. | 2N3767 |
|---|---|
| Datasheet | 2N3767 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistors |
| Buy | Stock & Price |
DESCRIPTION
●Continuous Collector Current IC= 4A●Collector Power Dissipation- : PC= 20W @TC= 25℃
APPLICATIONS
●Designed for power amplifier and medium speed applications. switchingABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 4A IB Base Current-Continuous 2A PC Collector Power Dissipation@TC=25℃ 20 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 8.75 UNIT ℃/W isc website： 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N3767ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETE