2N3767 Overview
Description
The CENTRAL SEMICONDUCTOR 2N3766 and 2N3767 are silicon NPN power transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications. MARKING: FULL PART NUMBER TO-66 CASE SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg JC 2N3766 80 2N3767 100 60 80 6.0 4.0 2.0 25 -65 to +200 7.0 SYMBOL TEST CONDITIONS MIN ICBO VCB=Rated VCBO ICEV VCE=Rated VCEO, VEB=1.5V ICEO VCE=Rated VCEO IEBO VEB=6.0V BVCEO IC=100mA (2N3766) 60 BVCEO IC=100mA (2N3767) 80 VCE(SAT) IC=500mA, IB=50mA VCE(SAT) IC=1.0A, IB=100mA VBE(ON) VCE10V, IC=1.0A hF.
