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2N3767 - Medium -power NPN silicon transistors

Download the 2N3767 datasheet PDF (2N3766 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for medium -power npn silicon transistors.

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Note: The manufacturer provides a single datasheet file (2N3766-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Motorola
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Full PDF Text Transcription

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2N3766 (SILICON) 2N3767 CASE 80 (TO-66) Medium -power NPN silicon transistors, for use in switching, and medium-power-Qmplifier applications. Complement to PNP 2N3740 (2N3766) 2N3741 (2N3767). Collector con nected to case MAXIMUM RATINGS (Te= 25"C unless otherwise noted) Rating Symbol Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage Collector Current - Continuous Base Current Peak Total Device Dissipation @ TC = 25° C Derate above 25° C Thermal Resistance Operating and Storage Junction Temperature Range VCB VEB VCEO IC IB PD eJC TJ' Tstg 2N3766 2N3767 80 100 6.0 6.0 60 80 4.0 4.0 2.0 20 0.133 7.5 -65 to °175 Unit Vdc Vdc Vdc Adc Adc Watts W/"C °C/W °C 20 en ~ <: 16 ~ z: 0 ~ 12 en0... en C8 .<.>.:.:.: ~ 0 0... 4 IS 0...
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