Datasheet4U Logo Datasheet4U.com

2N3766 - Medium -power NPN silicon transistors

📥 Download Datasheet

📁 Similar Datasheet

  • 2N3766 - NPN POWER SILICON TRANSISTOR (Microsemi Corporation)
  • 2N3766 - NPN Power Silicon Transistor (VPT)
  • 2N3766 - SILICON NPN POWER TRANSISTORS (Central Semiconductor)
  • 2N3766 - NPN Power Silicon Transistor (MA-COM)
  • 2N3766 - Silicon NPN Power Transistors (Inchange Semiconductor)
  • 2N3766 - Bipolar NPN Device (Seme LAB)
  • 2N3762 - PNP Transistor (Semicoa Semiconductor)
  • 2N3762 - PNP SWITCHING SILICON TRANSISTOR (Microsemi)
  • 2N3762 - Bipolar PNP Device (Seme LAB)
  • 2N3762 - PNP SILICON TRANSISTOR (Central Semiconductor)
Other Datasheets by Motorola
  • 2N3762 - PNP SIlicon Small-Signal Transistor
  • 2N3763 - PNP SIlicon Small-Signal Transistor
  • 2N3764 - PNP SIlicon Small-Signal Transistor
  • 2N3765 - PNP SIlicon Small-Signal Transistor
  • 2N3767 - Medium -power NPN silicon transistors
  • 2N376A - PNP Transistor
  • 2N3712 - NPN Transistor
  • 2N3713 - NPN silicon power transistors

Full PDF Text Transcription

Click to expand full text
2N3766 (SILICON) 2N3767 CASE 80 (TO-66) Medium -power NPN silicon transistors, for use in switching, and medium-power-Qmplifier applications. Complement to PNP 2N3740 (2N3766) 2N3741 (2N3767). Collector con nected to case MAXIMUM RATINGS (Te= 25"C unless otherwise noted) Rating Symbol Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage Collector Current - Continuous Base Current Peak Total Device Dissipation @ TC = 25° C Derate above 25° C Thermal Resistance Operating and Storage Junction Temperature Range VCB VEB VCEO IC IB PD eJC TJ' Tstg 2N3766 2N3767 80 100 6.0 6.0 60 80 4.0 4.0 2.0 20 0.133 7.5 -65 to °175 Unit Vdc Vdc Vdc Adc Adc Watts W/"C °C/W °C 20 en ~ <: 16 ~ z: 0 ~ 12 en0... en C8 .<.>.:.:.: ~ 0 0... 4 IS 0...
Published: |