2N3766 - NPN Power Silicon Transistor

VPT

Key Features

Available in JAN, JANTX, JANTXV per MIL-PRF19500/518.
TO-66 Package.
Designed for High Speed Switching and High Voltage Amplifier.

2N3766 npn power silicon transistor by VPT - Datasheet Preview

Datasheet Details

Part number	2N3766
Manufacturer	VPT
File Size	367.16 KB
Description	NPN Power Silicon Transistor
Datasheet	2N3766 Datasheet

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Other Datasheets by VPT

Part Number	Description
2N3767	NPN Power Silicon Transistor
2N3700	NPN Low Power Silicon Transistor
2N3700UB	NPN Low Power Silicon Transistor
2N3715	NPN High Power Silicon Transistor
2N3716	NPN High Power Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N3766, 2N3767 NPN Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF19500/518 • TO-66 Package • Designed for High Speed Switching and High Voltage Amplifier Applications Rev. V4 Electrical Characteristics (25oC unless otherwise specified) Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Test Conditions IC = 100 mA dc, 2N3766 IC = 100 mA dc, 2N3767 VCB = 80 Vdc 2N3766 VCB = 100 V dc 2N3767 Symbol Units Min. V(BR)CEO V dc 60 80 ICBO µA dc — Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Emitter - Base Cutoff Current On Characteristics VCE = 60 V dc 2N3766 VCE = 80 V dc 2N3767 ICEO µA dc — VCE = 80 V dc, VBE = 1.