Datasheet Summary
2N3766, 2N3767
NPN Power Silicon Transistor
Features
- Available in JAN, JANTX, JANTXV per MIL-PRF19500/518
- TO-66 Package
- Designed for High Speed Switching and High Voltage
Amplifier Applications
Rev. V4
Electrical Characteristics (25oC unless otherwise specified)
Parameter Off Characteristics
Collector
- Emitter Breakdown Voltage
Collector
- Base Cutoff Current
Test Conditions
IC = 100 mA dc, 2N3766 IC = 100 mA dc, 2N3767 VCB = 80 Vdc 2N3766 VCB = 100 V dc 2N3767
Symbol Units Min.
V(BR)CEO V dc
60 80
ICBO µA dc
- Collector
- Emitter Cutoff Current Collector
- Emitter Cutoff Current
Collector
- Emitter Cutoff Current Emitter
- Base Cutoff Current
On Characteristics
VCE = 60...
