2N3766 Datasheet and Specifications PDF

The 2N3766 is a NPN POWER SILICON TRANSISTOR.

Key Specifications

PackageTO-66
Mount TypeThrough Hole
Max Operating Temp200 °C
Min Operating Temp-65 °C
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Part Number2N3766 Datasheet
ManufacturerMicrosemi
Overview TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/518 Devices 2N3766 2N3767 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Vol. Vdc, VBE = 1.5 Vdc Collector-Base Cutoff Current VCB = 80 Vdc VCB = 100 Vdc Emitter-Base Cutoff Current VEB = 6.0 Vdc 2N3766 2N3767 2N3766 2N3767 2N3766 2N3767 2N3766 2N3767 V(BR)CEO 60 80 500 500 10 10 10 10 500 Vdc ICEO µAdc ICEX µAdc ICBO IEBO µAdc µAdc 6 Lake Street, Lawrence, MA 01841 1.
Part Number2N3766 Datasheet
DescriptionSILICON NPN POWER TRANSISTORS
ManufacturerCentral Semiconductor
Overview The CENTRAL SEMICONDUCTOR 2N3766 and 2N3767 are silicon NPN power transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications. MARKING. .
Part Number2N3766 Datasheet
DescriptionSilicon NPN Power Transistors
ManufacturerInchange Semiconductor
Overview ·Continuous Collector Current IC= 4A ·Collector Power Dissipation- : PC= 20W @TC= 25℃ APPLICATIONS ·Designed for power amplifier and medium speed applications. switching ABSOLUTE MAXIMUM RATINGS(Ta. .
Part Number2N3766 Datasheet
DescriptionNPN Power Silicon Transistor
ManufacturerVPT Components
Overview 2N3766, 2N3767 NPN Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF19500/518 • TO-66 Package • Designed for High Speed Switching and High Voltage Amplifier Applications.
* Available in JAN, JANTX, JANTXV per MIL-PRF19500/518
* TO-66 Package
* Designed for High Speed Switching and High Voltage Amplifier Applications Rev. V4 Electrical Characteristics (25oC unless otherwise specified) Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - B.

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