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2N3766 Datasheet SILICON NPN POWER TRANSISTORS

Manufacturer: Central Semiconductor

General Description

: The CENTRAL SEMICONDUCTOR 2N3766 and 2N3767 are silicon NPN power transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications.

MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg JC 2N3766 80 2N3767 100 60 80 6.0 4.0 2.0 25 -65 to +200 7.0 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=Rated VCBO ICEV VCE=Rated VCEO, VEB=1.5V ICEO VCE=Rated VCEO IEBO VEB=6.0V BVCEO IC=100mA (2N3766) 60 BVCEO IC=100mA (2N3767) 80 VCE(SAT) IC=500mA, IB=50mA VCE(SAT) IC=1.0A, IB=100mA VBE(ON) VCE10V, IC=1.0A hF

Overview

2N3766 2N3767 SILICON NPN POWER TRANSISTORS w w w.

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