Datasheet4U Logo Datasheet4U.com

2N3766 - SILICON NPN POWER TRANSISTORS

Description

The CENTRAL SEMICONDUCTOR 2N3766 and 2N3767 are silicon NPN power transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications.

📥 Download Datasheet

📁 Similar Datasheet

  • 2N3766 - NPN POWER SILICON TRANSISTOR (Microsemi Corporation)
  • 2N3766 - Medium -power NPN silicon transistors (Motorola)
  • 2N3766 - NPN Power Silicon Transistor (VPT)
  • 2N3766 - NPN Power Silicon Transistor (MA-COM)
  • 2N3766 - Silicon NPN Power Transistors (Inchange Semiconductor)
  • 2N3766 - Bipolar NPN Device (Seme LAB)
  • 2N3762 - PNP Transistor (Semicoa Semiconductor)
  • 2N3762 - PNP SIlicon Small-Signal Transistor (Motorola)
  • 2N3762 - PNP SWITCHING SILICON TRANSISTOR (Microsemi)
  • 2N3762 - Bipolar PNP Device (Seme LAB)
Other Datasheets by Central Semiconductor

Full PDF Text Transcription

Click to expand full text
2N3766 2N3767 SILICON NPN POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3766 and 2N3767 are silicon NPN power transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg JC 2N3766 80 2N3767 100 60 80 6.0 4.0 2.0 25 -65 to +200 7.
Published: |