Datasheet Details
| Part number | 2N3766 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 136.32 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | 2N3766-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Part number | 2N3766 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 136.32 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | 2N3766-InchangeSemiconductor.pdf |
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·Continuous Collector Current IC= 4A ·Collector Power Dissipation- : PC= 20W @TC= 25℃ APPLICATIONS ·Designed for power amplifier and medium speed applications.
switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 4A IB Base Current-Continuous 2A PC Collector Power Dissipation@TC=25℃ 20 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 8.75 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N3766 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER
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2N3766 | NPN POWER SILICON TRANSISTOR | Microsemi Corporation |
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