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2N3767 - Silicon NPN Power Transistors

General Description

Continuous Collector Current IC= 4A Collector Power Dissipation- : PC= 20W @TC= 25℃ APPLICATIONS

applications.

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N3767 DESCRIPTION ·Continuous Collector Current IC= 4A ·Collector Power Dissipation- : PC= 20W @TC= 25℃ APPLICATIONS ·Designed for power amplifier and medium speed applications. switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 4A IB Base Current-Continuous 2A PC Collector Power Dissipation@TC=25℃ 20 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 8.75 UNIT ℃/W isc website：www.iscsemi.