| Part number | 2N3767 |
|---|---|
| Download | 2N3767 Datasheet (PDF) |
| File Size | 53.76 KB |
| Manufacturer | Microsemi |
| Description | NPN POWER SILICON TRANSISTOR |
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| Manufacturer | Part Number | Description |
|---|---|---|
Seme LAB |
2N3767 | Bipolar NPN Device |
Motorola Semiconductor |
2N3767 | Medium -power NPN silicon transistors |
VPT Components |
2N3767 | NPN Power Silicon Transistor |
Central Semiconductor |
2N3767 | SILICON NPN POWER TRANSISTORS |
MACOM Technology Solutions |
2N3767 | NPN Power Silicon Transistor |
7.0 C THERMAL CHARACTERISTICS Characteristics Symbol , Junction-to-Case RθJC 1) Derate linearly 143 mW/0C between TC = +250C and TC = +2000C Unit 0 C/W TO-66 (TO-213AA) See Appendix A for Package Outline (TC = 250C unless otherwise noted) Characteristics Symbol Min. IB = 0.05 Adc Turn-Off Time VCC = 30 Vdc; Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
