| Part number | 2N3767 |
|---|---|
| Datasheet | 2N3767_MicrosemiCorporation.pdf |
| File Size | 53.76 KB |
| Manufacturer | Microsemi (now Microchip Technology) |
| Description | NPN POWER SILICON TRANSISTOR |
|
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7.0 C THERMAL CHARACTERISTICS Characteristics Symbol , Junction-to-Case RθJC 1) Derate linearly 143 mW/0C between TC = +250C and TC = +2000C Unit 0 C/W TO-66 (TO-213AA) See Appendix A for Package Outline (TC = 250C unless otherwise noted) Characteristics Symbol Min. IB = 0.05 Adc Turn-Off Time VCC = 30 Vdc; Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2N3767 | Bipolar NPN Device | Seme LAB |
 |
2N3767 | Medium -power NPN silicon transistors | Motorola |
 |
2N3767 | NPN Power Silicon Transistor | VPT |
 |
2N3767 | SILICON NPN POWER TRANSISTORS | Central Semiconductor |
 |
2N3767 | NPN Power Silicon Transistor | MA-COM |
See all Microsemi (now Microchip Technology) datasheets
| Part Number | Description |
|---|---|
| 2N3766 | NPN POWER SILICON TRANSISTOR |
| 2N3700 | LOW POWER NPN SILICON TRANSISTOR |
| 2N3719 | Silicon PNP Power Transistors |
| 2N3720 | Silicon PNP Power Transistors |
| 2N3733 | RF & MICROWAVE TRANSISTORS |
| 2N3740 | Medium Power PNP Transistors |
| 2N3740A | Medium Power PNP Transistors |
| 2N3741 | Medium Power PNP Transistors |
| 2N3741A | Medium Power PNP Transistors |
| 2N3743 | PNP HIGH VOLTAGE SILICON TRANSISTOR |
