2N3767 - NPN Power Silicon Transistor

VPT

Download the 2N3767 datasheet PDF. This datasheet also covers the 2N3766 variant, as both devices belong to the same npn power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

Available in JAN, JANTX, JANTXV per MIL-PRF19500/518.
TO-66 Package.
Designed for High Speed Switching and High Voltage Amplifier.

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2N3767 npn power silicon transistor by VPT - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2N3766-VPT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2N3767
Manufacturer	VPT
File Size	367.16 KB
Description	NPN Power Silicon Transistor
Datasheet	2N3767 Datasheet

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Other Datasheets by VPT

Part Number	Description
2N3766	NPN Power Silicon Transistor
2N3700	NPN Low Power Silicon Transistor
2N3700UB	NPN Low Power Silicon Transistor
2N3715	NPN High Power Silicon Transistor
2N3716	NPN High Power Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2N3766, 2N3767 NPN Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF19500/518 • TO-66 Package • Designed for High Speed Switching and High Voltage Amplifier Applications Rev. V4 Electrical Characteristics (25oC unless otherwise specified) Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Test Conditions IC = 100 mA dc, 2N3766 IC = 100 mA dc, 2N3767 VCB = 80 Vdc 2N3766 VCB = 100 V dc 2N3767 Symbol Units Min. V(BR)CEO V dc 60 80 ICBO µA dc — Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Emitter - Base Cutoff Current On Characteristics VCE = 60 V dc 2N3766 VCE = 80 V dc 2N3767 ICEO µA dc — VCE = 80 V dc, VBE = 1.