Inchange Semiconductor 2N5401
Silicon PNP Power Transistor
| Part No. | 2N5401 |
|---|---|
| Datasheet | 2N5401 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●PNP high-voltage transistor●Low current (max. 300 mA)
●High voltage (max. 160 V)
●Complements to 2N5551. isc Product Specification 2N5401
APPLICATIONS
●Designed for Switching and amplification in high voltage applications , such as telephony applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous 0.3 A ICM Collector Current-Peak 0.6 A IBM Base Current-Peak PC Collector Power Dissipation @ Ta<50℃ 0.1 A 0.63 W J Junction Temperature Tstg Storage Temperature Range 150 ℃ -65~150 ℃ isc website： 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2N5551ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10mA; IB= 1mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC=...