Datasheet Details
| Part number | 2N6493 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.54 KB |
| Description | NPN Transistor |
| Datasheet | 2N6493-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | 2N6493 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.54 KB |
| Description | NPN Transistor |
| Datasheet | 2N6493-INCHANGE.pdf |
|
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·High DC current gain : hFE= 500(Min)@ IC= 3A ·With TO-3 package ·Low collector saturation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and low frequency swithing applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A PC Collector Power Dissipation@TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature THERMAL CHARACTERISTICS -65~200 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.75 ℃/W 2N6493 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=10A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N6493 | Silicon Power Transistor | SavantIC |
| Part Number | Description |
|---|---|
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