Datasheet Details
| Part number | 2N6575 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.80 KB |
| Description | NPN Transistor |
| Datasheet | 2N6575-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Power Transistor.
| Part number | 2N6575 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.80 KB |
| Description | NPN Transistor |
| Datasheet | 2N6575-INCHANGE.pdf |
|
|
|
·Collector-Emitter Sustaining Voltage- : VCEO = 300V(Min.) ·Fast Switching Speed ·High Current Capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for converters, inverters, pulse-width- modulated regulators and a variety of power switching circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A PC Collector Power Dissipation@TC=25℃ 125 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ 2N6575 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC=3A;
IB= 0.3A VBE(on) Base-Emitter On Voltage IC= 7A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2N6575 | Bipolar NPN Device | Seme LAB |
| Part Number | Description |
|---|---|
| 2N6573 | NPN Transistor |
| 2N6579 | NPN Transistor |
| 2N6506 | Thyristor |
| 2N6508 | Thyristor |
| 2N6509 | Thyristor |
| 2N6509G | Thyristor |
| 2N6560 | Silicon NPN Power Transistor |
| 2N6561 | Silicon NPN Power Transistor |
| 2N60 | TO-251 N-Channel MOSFET |
| 2N6032 | Silicon NPN Power Transistor |