Datasheet Details
| Part number | 2N6772 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.63 KB |
| Description | NPN Transistor |
| Datasheet | 2N6772-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistors.
| Part number | 2N6772 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.63 KB |
| Description | NPN Transistor |
| Datasheet | 2N6772-INCHANGE.pdf |
|
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in off-line power supplies and is also well suited for use in a wide range of inverter or converter circuits and pulse-width-modulated regulators and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 550 V 350 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak 3 A PC Collector Power Dissipation@TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 3.125 UNIT ℃/W 2N6772 isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;
IB= 0 V(BR)EBO VCE(sat) VBE(sat) Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IE= 1mA ;
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