Download 2N6934 Datasheet PDF
Inchange Semiconductor
2N6934
DESCRIPTION - High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V(Min) - High Switching Speed - Wide Area of Safe Operation - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for off-line power supplies,switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~150 ℃...