2N6934 - NPN Transistor

Datasheet Summary

Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V(Min) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for off-line power supplies，switching regulator and gene

INCHANGE

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Datasheet Details

Part number	2N6934
Manufacturer	INCHANGE
File Size	180.22 KB
Description	NPN Transistor
Datasheet	2N6934 Datasheet
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Full PDF Text Transcription

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for off-line power supplies，switching regulator and general purpose applications.

Published: Sep 27, 2020 |