Inchange Semiconductor 2SA1195
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SA1195 |
|---|---|
| Datasheet | 2SA1195 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
●Low Collector Saturation Voltage●High voltage
●Complement to Type 2SC2483
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for audio frequency power amplifiersABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range VALUE -160 -160 -6 -1.5 2 UNIT V V V A w 10 W 175 ℃ -55~150 ℃ isc website： isc & iscsemi is registered trademark isc Silicon PNP Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA VBE(on) Collector-Emitter Saturation Voltage IC= -50mA;VCE=-5V ICBO Collector Cutoff Current VCB= -160V; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE-1 DC Current Ga...