Datasheet Details
| Part number | 2SA1283 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 162.61 KB |
| Description | PNP Transistor |
| Datasheet | 2SA1283-INCHANGE.pdf |
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Overview: isc Silicon PNP Transistor.
| Part number | 2SA1283 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 162.61 KB |
| Description | PNP Transistor |
| Datasheet | 2SA1283-INCHANGE.pdf |
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·High Voltage and High Current Vceo=-60V(Min.） ·Excellent hFE Linearity ·Low Noise ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency general purpose amplifier Applications ·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Curren PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 2SA1283 VALUE UNIT -60 V -60 V -6 V -1 A 900 mW 150 ℃ -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA ;
IB= -25mA ICBO Emitter Cutoff Current VCB= -50V;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1283 | PNP Transistor | JCET |
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|---|---|
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