Datasheet Details
| Part number | 2SA779 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.50 KB |
| Description | PNP Transistor |
| Datasheet | 2SA779-INCHANGE.pdf |
|
|
Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA779 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.50 KB |
| Description | PNP Transistor |
| Datasheet | 2SA779-INCHANGE.pdf |
|
|
|
·DC Current Gain- : hFE= 40(Min)@ IC= -0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -35V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -35 VCEO Collector-Emitter Voltage -35 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -1.5 IB Base Current-Continuous -0.5 Collector Power Dissipation @ Ta=25℃ 1.0 PC Collector Power Dissipation @ TC=25℃ 10 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 INCHANGE Semiconductor 2SA779 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA779 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ;
IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A;
| Part Number | Description |
|---|---|
| 2SA700 | PNP Transistor |
| 2SA715 | PNP Transistor |
| 2SA740 | PNP Transistor |
| 2SA743 | PNP Transistor |
| 2SA743A | PNP Transistor |
| 2SA744 | PNP Transistor |
| 2SA745A | PNP Transistor |
| 2SA746 | PNP Transistor |
| 2SA754 | PNP Transistor |
| 2SA758 | PNP Transistor |