High Collector Current:: IC= -5A
Low Collector Saturation Voltage
: VCE(sat)= -1.5V(Max)@IC= -3A
Wide Area of Safe Operation
Complement to Type 2SD1832
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for low frequ
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isc Silicon PNP Power Transistor
DESCRIPTION ·High Collector Current:: IC= -5A ·Low Collector Saturation Voltage
: VCE(sat)= -1.5V(Max)@IC= -3A ·Wide Area of Safe Operation ·Complement to Type 2SD1832 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak
Total Power Dissipation @ Ta=25℃
PC Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-10
A
2 W
30
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SB1292
isc website：www.
2SB1292 Datasheet
