Datasheet Details
| Part number | 2SB1293 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.25 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1293-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SB1293.
| Part number | 2SB1293 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.25 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1293-INCHANGE.pdf |
|
|
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·High Collector Current:: IC= -5A ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -3A ·Wide Area of Safe Operation ·plement to Type 2SD1896 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -10 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1293 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB1291 | PNP Transistor |
| 2SB1292 | PNP Transistor |
| 2SB1294 | PNP Transistor |
| 2SB1205 | PNP Transistor |
| 2SB1223 | PNP Transistor |
| 2SB1225 | PNP Transistor |
| 2SB1226 | PNP Transistor |
| 2SB1227 | PNP Transistor |
| 2SB1228 | PNP Transistor |
| 2SB1230 | PNP Transistor |