Datasheet Details
| Part number | 2SB612 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.33 KB |
| Description | PNP Transistor |
| Datasheet | 2SB612-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistors 2SB612.
| Part number | 2SB612 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.33 KB |
| Description | PNP Transistor |
| Datasheet | 2SB612-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·High Power Dissipation- : PC= 100W(Max)@TC=25℃ ·Complement to Type 2SD582 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Recommended for 80~100W audio amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak -15 A IB Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -2 A 100 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;
RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA;
| Part Number | Description |
|---|---|
| 2SB611 | Silicon PNP Power Transistor |
| 2SB613 | PNP Transistor |
| 2SB616 | PNP Transistor |
| 2SB600 | PNP Transistor |
| 2SB601 | PNP Transistor |
| 2SB604 | PNP Transistor |
| 2SB608 | PNP Transistor |
| 2SB609 | PNP Transistor |
| 2SB624 | PNP Transistor |
| 2SB625 | PNP Transistor |