Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min)
High Power Dissipation-
: PC= 100W(Max)@TC=25℃
Complement to Type 2SD582
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Recommended for 80~100W audio amplifier outpu
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isc Silicon PNP Power Transistors
2SB612
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min) ·High Power Dissipation-
: PC= 100W(Max)@TC=25℃ ·Complement to Type 2SD582 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Recommended for 80~100W audio amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-180
V
VCEO
Collector-Emitter Voltage
-140
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-12
A
ICM
Collector Current-Peak
-15
A
IB
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
-2
A
100
W
150
℃
Tstg
Storage Temperature
-55~150 ℃
isc website：www.iscsemi.
2SB612 Datasheet
