2SB613 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -250V(Min) ·High Power Dissipation- : 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA.