Datasheet Details
| Part number | 2SB613 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.46 KB |
| Description | PNP Transistor |
| Datasheet | 2SB613-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistors.
| Part number | 2SB613 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.46 KB |
| Description | PNP Transistor |
| Datasheet | 2SB613-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -250V(Min) ·High Power Dissipation- : PC= 150W(Max)@TC=25℃ ·High Current Capability ·Complement to Type 2SD583 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -5 A 150 W 200 ℃ Tstg Storage Temperature -65~200 ℃ 2SB613 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ;
IB= 0 V(BR)CBO Collector-Emitter Breakdown Voltage IC= -1mA ;IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE=-1mA ;IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A;
IB= -1A ICBO Collector Cutoff Current VCB= -250V;
| Part Number | Description |
|---|---|
| 2SB611 | Silicon PNP Power Transistor |
| 2SB612 | PNP Transistor |
| 2SB616 | PNP Transistor |
| 2SB600 | PNP Transistor |
| 2SB601 | PNP Transistor |
| 2SB604 | PNP Transistor |
| 2SB608 | PNP Transistor |
| 2SB609 | PNP Transistor |
| 2SB624 | PNP Transistor |
| 2SB625 | PNP Transistor |