Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -250V(Min)
High Power Dissipation-
: PC= 150W(Max)@TC=25℃
High Current Capability
Complement to Type 2SD583
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for hig
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isc Silicon PNP Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -250V(Min) ·High Power Dissipation-
: PC= 150W(Max)@TC=25℃ ·High Current Capability ·Complement to Type 2SD583 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-250
V
VCEO
Collector-Emitter Voltage
-250
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-15
A
IB
Base Current
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
-5
A
150
W
200
℃
Tstg
Storage Temperature
-65~200 ℃
2SB613
isc website：www.iscsemi.
2SB613 Datasheet
