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2SB772 Datasheet PDF

Inchange Semiconductor 2SB772

The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
  • Max Operating Temp : 150°C
  • Min Operating Temp : -55°C
Source: Octopart
Part No. 2SB772
Datasheet 2SB772 Download
Manufacturer
Inchange Semiconductor
Description Silicon PNP Power Transistors
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2SB772 datasheet page 1 preview

DESCRIPTION

●High Collector Current -IC= -3A
●High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min)
●Good Linearity of hFE
●Low Saturation Voltage
●Complement to Type 2SD882
●Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS

●Designed for use in the output stage of 3 watts audio amp- lifier, voltage regulator, DC-DC converter and relay driver.

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -7 A 10 W 1 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB772 isc website: 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB772

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Em...
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