Datasheet Details
| Part number | 2SB783 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.25 KB |
| Description | PNP Transistor |
| Datasheet | 2SB783-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB783.
| Part number | 2SB783 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.25 KB |
| Description | PNP Transistor |
| Datasheet | 2SB783-INCHANGE.pdf |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -6 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB783 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A;
IB= -0.4A VBE(on) Base-Emitter On Voltage IC= -0.5A ;
| Part Number | Description |
|---|---|
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| 2SB705B | PNP Transistor |
| 2SB707 | PNP Transistor |
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