Datasheet Details
| Part number | 2SB786 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.81 KB |
| Description | PNP Transistor |
| Datasheet | 2SB786-INCHANGE.pdf |
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Overview: isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB786.
| Part number | 2SB786 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.81 KB |
| Description | PNP Transistor |
| Datasheet | 2SB786-INCHANGE.pdf |
|
|
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -40V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -0.5A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -3 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range -0.1 A 5 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB786 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBO L PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -2mA;
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