Datasheet4U Logo Datasheet4U.com

2SB786 - PNP Transistor

Datasheet Summary

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -40V(Min) High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -0.5A) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed switchi

📥 Download Datasheet

Datasheet preview – 2SB786

Datasheet Details

Part number 2SB786
Manufacturer INCHANGE
File Size 178.81 KB
Description PNP Transistor
Datasheet download datasheet 2SB786 Datasheet
Additional preview pages of the 2SB786 datasheet.

📁 Similar Datasheet

  • 2SB788 - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SB789 - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SB789A - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SB703 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB705 - Silicon PNP Power Transistors (SavantIC)
  • 2SB705A - Silicon PNP Power Transistors (SavantIC)
  • 2SB705A - Power Transistor (Inchange Semiconductor)
  • 2SB705B - Silicon PNP Power Transistors (SavantIC)
  • 2SB706 - PNP/NPN SILICON TRANSISTOR (ETC)
  • 2SB706A - PNP/NPN SILICON TRANSISTOR (ETC)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB786 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -40V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -0.5A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -3 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range -0.
Published: |