Datasheet Details
| Part number | 2SB919 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.56 KB |
| Description | PNP Transistor |
| Datasheet | 2SB919-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SB919 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.56 KB |
| Description | PNP Transistor |
| Datasheet | 2SB919-INCHANGE.pdf |
|
|
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·High Collector Current: IC= -8A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -3A ·plement to Type 2SD1235 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for large current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃ TJ Junction Temperature -15 A 30 W 1.75 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB919 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB919 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB919 | PNP Transistor | Sanyo Semicon Device |
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2SB919 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
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| 2SB983 | PNP Transistor |
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