High Collector Current: IC= -8A
Low Collector Saturation Voltage
: VCE(sat)= -0.5V(Max)@IC= -3A
Complement to Type 2SD1235
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for large current switching applications.
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isc Silicon PNP Power Transistor
DESCRIPTION ·High Collector Current: IC= -8A ·Low Collector Saturation Voltage
: VCE(sat)= -0.5V(Max)@IC= -3A ·Complement to Type 2SD1235 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for large current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-30
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-8
A
ICM
Collector Current-Peak
Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃
TJ
Junction Temperature
-15
A
30 W
1.75
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SB919
isc website：www.iscsemi.
2SB919 Datasheet
