2SB919
2SB919 is SILICON POWER TRANSISTOR manufactured by SavantIC.
DESCRIPTION
- With TO-220C package
- plement to type 2SD1235
- Low collector saturation voltage
- Large current capacity APPLICATIONS
- Large current switching of relay drivers, high-speed inverters,converters
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 30 150 -50~150 Open emitter Open base Open collector CONDITIONS VALUE -60 -30 -6 -8 -15 1.75 W UNIT V V V A A
Savant IC Semiconductor
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Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-1m A; RBE=; IC=-1m A; IE=0 IE=-1m A; IC=0 IC=-3A; IB=-0.15A VCB=-40V; IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-4A ; VCE=-2V IC=-1A ; VCE=-5V 70 30 120 MIN -30 -60 -6
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO h FE-1 h FE-2 f T
TYP.
UNIT V V V
-0.5 -0.1 -0.1 280
V m A m A
MHz
Switching times ton tstg tf Turn-on time Storage time Turn-off time IC=-4A ; VCC=-10V IB1=-IB2=-0.2A;RL=2.5B 0.1 0.2 0.03 µs µs µs h FE-1Classifications Q 70-140 R 100-200 S 140-280
Savant IC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
Savant IC Semiconductor
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