2SB919
2SB919 is PNP Transistor manufactured by SANYO.
Features
- Low collector-to-emitter saturation voltage : VCE(sat)=- 0.5V (PNP), 0.4V (NPN) max.
- Large current capacity.
Package Dimensions unit:mm 2010C
[2SB919/2SD1235]
( ) : 2SB919
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product
ICBO IEBO h FE1 h FE2 f T
VCB=(- )40V, IE=0 VEB=(- )4V, IC=0 VCE=(- )2V, IC=(- )1A VCE=(- )2V, IC=(- )4A VCE=(- )5V, IC=(- )1A
- : The 2SB919/2SD1235 are classified as follows according to h FE at 1A.
70 Q 140 100 R 200 140 S 280
JEDEC : TO-220AB EIAJ : SC-46
1 : Base 2 : Collector 3 : Emitter
Ratings (- )60 (- )30 (- )6 (- )8 (- )15 1.75 30 150
- 55 to +150
Unit V V V A A W W ˚C ˚C
Ratings min typ
70- 30
120 max (- )0.1 (- )0.1 280-
Unit m A m A
MHz
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
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